{"id":3764,"date":"2020-05-25T11:38:00","date_gmt":"2020-05-25T03:38:00","guid":{"rendered":"https:\/\/flexible.test.uphong.cn\/article\/read_3764"},"modified":"2024-10-07T12:16:35","modified_gmt":"2024-10-07T04:16:35","slug":"proposal-of-the-two-sessions-power-semiconductors-will-become-the-best-breakthrough-of-chinese-core","status":"publish","type":"post","link":"https:\/\/www.flexible-auto.com\/en\/article\/3764.html","title":{"rendered":"Proposal of the two sessions: power semiconductors will become the best breakthrough of "Chinese core""},"content":{"rendered":"
As China and the United States competed against each other in science and technology, proposals and suggestions on the development of China’s semiconductor industry by the deputies at the two sessions attracted much attention. Among them, the DPP Central intends to submit a “proposal to promote the scientific development of China’s power semiconductor industry.”<\/p>\n
The proposal stated that in recent years, the country has issued a series of policies and measures to support and promote the development of the semiconductor industry, and has achieved relatively outstanding results. It has basically completed the layout of the industrial chain and has shown a good situation of multi-point flowering in the field of power semiconductors.<\/p>\n
However, from the perspective of the global power semiconductor market, on the one hand, traditional silicon material power semiconductors still have huge room for development, and studies have shown that the global market for silicon carbide and gallium nitride and other new material power semiconductor chip market applications is about 300 million The multi-US dollar, silicon material power semiconductor chip market application volume exceeds 20 billion US dollars. The mainstream of IGBT chips in the international market is the 5th, 6th and 7th generation of silicon materials. The international power semiconductor industry believes that silicon materials and power semiconductor materials have been verified by large-scale market applications for more than 30 years. Features such as development space will remain mainstream in market applications for at least 7 to 8 years in the future. On the other hand, the third generation of semiconductor materials represented by silicon carbide (SiC) and gallium nitride (GaN) are booming, and the development of silicon carbide and gallium nitride power semiconductor devices in China has started late, and there are still great technical gap. Fortunately, with the support of several national scientific research programs, this aspect has greatly reduced the technological gap with the international community and achieved many achievements.<\/p>\n
With the continuous emergence of new applications in the fields of industry, automobiles, wireless communications and consumer electronics, and the increasingly urgent need for energy saving and emission reduction, China’s power semiconductors have a huge market demand, which is easy to spawn new industries and new technologies. Under the favorable national policies, power semiconductors It will become the best breakthrough of “China Core”.<\/p>\n","protected":false},"excerpt":{"rendered":"
As China and the United States competed against each ot […]<\/p>\n","protected":false},"author":1,"featured_media":0,"comment_status":"closed","ping_status":"closed","sticky":false,"template":"","format":"standard","meta":{"footnotes":""},"categories":[32],"tags":[],"acf":[],"yoast_head":"